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LATTICE PARAMETER CHANGE OF BaSrTiO_3 FILMS GROWN BY PULSED LASER DEPOSITION

机译:脉冲激光沉积生长Basrtio_3薄膜的晶格参数变化

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Single phase Ba_(0.5)Sr_(0.5)TiO_3 films with three different thicknesses (40, 80, and 160 nm) have been deposited onto MgO substrates by pulsed laser deposition (PLD). The lattice parameters for the thin film have been measured using x-ray diffraction. The deposited films all show a significant tetragonal distortion. The in-plane lattice parameters for all film thickness are always larger than surface normal lattice parameters for as-deposited films. Films (80 and 160 nm) annealed at 900, 1100, and 1200 °C for 6 hours after deposition show reduced tetragonal distortion compared to as-deposited films. Further, tetragonal distortion of annealed films with thicknesses of 80 and 160 nm were reduced with decreasing annealing temperature from 1200 °C to 900 °C, while that with a thickness of 40 nm is increased with decreasing annealing temperature. This result indicates that the stress due to lattice mismatch and thermal expansion difference changes as a function of film thickness.
机译:通过脉冲激光沉积(PLD)已经将具有三种不同厚度(40,80和160nm)的单相BA_(0.5)SR_(0.5)TiO_3膜沉积在MgO基板上。使用X射线衍射测量薄膜的晶格参数。沉积的薄膜均显示出显着的四方变形。所有膜厚度的平面晶格参数总是大于用于沉积薄膜的表面普通晶格参数。在沉积后,在900,1100和1200℃下退火6小时的薄膜(80和160nm)显示出与沉积的薄膜相比减少四边形变形。此外,随着1200℃至900℃的退火温度降低,减少了厚度为80和160nm的退火膜的四边形变形,同时随着退火温度的降低而增加,厚度为40nm。该结果表明,由于晶格错配和热膨胀差异的应力随着膜厚度的函数而变化。

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