Oxygen deficiency and vavancy formation in LSCO/PLZT/LSCO capacitors

摘要

Vacancy type defects in La{sub}0.5Sr{sub}0.5CoO{sub}3/Pb{sub}0.9La{sub}0.1Zr{sub}0.2Ti{sub}0.8/La{sub}0.5Sr{sub}0.5CoO{sub}3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.