首页> 外文会议>International symposium on superconductivity;ISS'96 >Development of Biaxially Textured Buffer layers on Rolled-Ni Substrates for High Current YBa_2Cu_3O_(7-y) Coated Conductors
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Development of Biaxially Textured Buffer layers on Rolled-Ni Substrates for High Current YBa_2Cu_3O_(7-y) Coated Conductors

机译:用于高电流YBa_2Cu_3O_(7-y)涂层导体的轧制Ni衬底上双轴织构缓冲层的开发

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This paper describes the development of three buffer layer architectures with good biaxial textures on rooled-Ni substrates using vacuum processing techniques. The techniques include pulsed laser ablation, e-beam evaporation, dc and rf magnetron sputtering. The first buffer layer architecture consists of an epitaxial laminate of Ag/Pd(Pt)/Ni. The second buffer layer consists of an epitaxial laminate of CeO_2/CeO_2/Ni. The third alternative buffer layer architecture consists of an epitaxial laminate of YSZ/CeO_2/NI. The cube (100) texture in the Ni was produced by cold-rolling followed by recrystallization. The crystallographic orientations of the Pd, Ag, CeO_2, and YSZ films grown were all (100). We recently demonstrated a critical-current density of 0.73 x 10~6 A/cm~2 at 77 K and zero field on 1.4 mu m thick YBa_2Cu_3O_(7-6) (YBCO) films. This film was deposited by pulsed laser ablation on a YBCO/YSZ/CeO_2/Ni substrate.
机译:本文介绍了使用真空处理技术开发的三层具有良好双轴织构的缓冲层结构,这些结构在镍基镍基衬底上具有良好的双轴织构。该技术包括脉冲激光烧蚀,电子束蒸发,直流和射频磁控溅射。第一缓冲层结构由Ag / Pd(Pt)/ Ni的外延叠层组成。第二缓冲层由CeO_2 / CeO_2 / Ni的外延叠层组成。第三替代缓冲层架构由YSZ / CeO_2 / NI的外延层压板组成。通过冷轧然后再结晶产生Ni中的立方体(100)织构。生长的Pd,Ag,CeO_2和YSZ薄膜的晶体取向均为(100)。我们最近在1.4 Km厚的YBa_2Cu_3O_(7-6)(YBCO)薄膜上在77 K和零磁场下显示了0.73 x 10〜6 A / cm〜2的临界电流密度。通过脉冲激光烧蚀将该膜沉积在YBCO / YSZ / CeO_2 / Ni衬底上。

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