A generic radiation sensor based on silicon memory devices

摘要

The Single Event Upset phenomenon caused by ionizing radiation in high density integrated circuits has been a topic of considerable interest to scientists of various disciplines in the last two decades. With particular reference to dynamic Random Access Memories (dRAMs), we have introduced through our research work the operating principle of a generic semiconductor-based position sensitive radiation sensor which is used for the detection of charged particles and neutrons. Employing dRAMs as particle detectors follows as a consequence of the electron-hole pairs being formed along the ionization track. The practical implementation and performance of such a sensor, in combination with Monte Carlo simulations, have been the main thrust of our research, which is likely to lead to a variety of radiation detectors with industrial and biomedical applications. This paper aims to discuss the capabilities of such a radation detecting device.