MeV ion beam induced epitaxial crystallization of Si_(0.99)C_(0.01) layers on silicon

机译：MeV离子束诱导硅上Si_（0.99）C_（0.01）层的外延结晶

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Multiple energy carbon ion implantation was used t o form a 150 nm thick uniformly 1 at.

机译：使用多能量碳离子注入以均匀地形成150nm厚的1at.cm。

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《International conference on application of accelerators in research and industry》|1997年|p.981-984|共4页
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S.Rey; D.Muller; J.J.Grob; A.Grob; J.P.Stoquert;
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1. MeV heavy ion beam induced epitaxial crystallization of buried Si_3N_4 layer [J] . T. Som, B. Satpati, O.P. Sinha, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2006,第1期

机译：MeV重离子束诱导的Si_3N_4埋层的外延结晶
2. Epitaxial growth of a deposited amorphous Si layer formed on hydrogen- terminated Si(001) surfaces by ion beam induced epitaxial crystallization combined with ion beam mixing [J] . Yachida Gosuke, Hoshino Yasushi, Nakata Jyoji Japanese journal of applied physics . 2019,第3期

机译：结合离子束混合的离子束诱导外延结晶在氢终止的Si（001）表面上形成的沉积非晶Si层的外延生长
3. Positron Annihilation Due to Silicon Vacancies in 3C and 6H SiC Epitaxial Layers Induced by 1 MeV Electron Irradiation [J] . A. Kawasuso, F. Redmann, R. Krause-Rehberg, Physica status solidi, B. Basic research . 2001,第2期

机译：1 MeV电子辐照在3C和6H SiC外延层中的硅空位导致的正电子An没
4. MeV ion beam induced epitaxial crystallization of Si_(0.99)C_(0.01) layers on silicon. [C] . S.Rey, D.Muller, J.J.Grob, International conference on application of accelerators in research and industry . 1997

机译：MeV离子束诱导硅上的Si_（0.99）C_（0.01）层外延结晶。
5. Epitaxial silicon thin films by low temperature aluminum induced crystallization of amorphous silicon. [D] . Sharif, Khalil Hashem. 2005

机译：外延硅薄膜是由低温铝引起的非晶硅的结晶。
6. Green Synthesis of Mg0.99 Zn0.01O Nanoparticles for the Fabrication of κ-Carrageenan/NaCMC Hydrogel in order to Deliver Catechin [O] . Farzaneh Sabbagh, Khadijeh Kiarostami, Nadia Mahmoudi Khatir, 2020

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机译：Pt / Ti _{0.99 Sc 0.01 O _{2-Δ / pt多层具有电子 - 离子混合传导的脉冲诱导的电阻率调节}}
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机译：测量0.01-5 meV能区中exp 233 U，exp 235 U和exp 239 pu热中子诱发裂变的瞬发中子谱和0.01-10 mev区域中的exp 252 Cf自发裂变

MeV ion beam induced epitaxial crystallization of Si_(0.99)C_(0.01) layers on silicon

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