Recent progress in optical studies of wurtzite GaN grown by metalorganic chemical vapor deposition

摘要

We present the recent results of our spectroscopic studies on optical properties of GaN grown by metalorganic chemical vapor deposition, including the issues vital to device applications such as stimulated emission and laser action, as well as carrier relaxiation dynamics. By optical pumping, stimulated emission and lasing were investigated over a wide temperature range up to 420 K. Using a picosecond streak camera, free and bound exition emission decay times were measured. In addition the effects of pressure on the optical interband trsnitions and the transitions associated with impurity/defect states were studied using diamond-anvl pressure-cell techniques.