机译:通过金属有机化学气相沉积法生长的双波长InGaN / GaN隧道注入发光二极管的光学和结构研究
Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan, ROC;
Department of Electronic Science, Xiamen University, Xiamen 361005, PR China;
Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan, ROC;
Uni Light Technology Corporation, Taoyuan, Taiwan, ROC;
Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan, ROC;
Department of Physics, Xiamen University, Xiamen 361005, PR China;
Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan, ROC;
metalorganic chemical vapor deposition; (MOCVD); InGaN/GaN; multiple quantum well (MQW); x-ray diffraction (XRD); transmission electron microscopy (TEM); photoluminescence (PL); photoluminescence excitation (PLE);
机译:金属有机化学气相沉积法制备InGaN / GaN多量子阱绿色发光二极管的研究
机译:金属化学气相沉积种植N-InGaN / N-GaN隧道连接,用于微发光二极管,具有非常低的正向电压
机译:用于低正向电压IngaN发光二极管的金属化学化学气相沉积 - 生长隧道连接:外延优化和光提取仿真
机译:金属有机化学气相沉积在(1122)刻面GaN /蓝宝石模板上生长的InGaN / GaN多量子阱发光二极管的结构和光学性质
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:使用通过金属有机化学气相沉积法生长的原位GaN纳米结构的无磷白光发射器
机译:金属有机化学气相沉积法制备InGaN ∕ GaN多量子阱绿色发光二极管的研究