Negative transconductance and depletion effects in gated resonant tunneling diodes

摘要

The characteristics of resonant tunneling devices, under the condition of quantum size effect, are theoretically studied in the AlGaAs/GaAs matrial system. The electron transport mechanisms and the current-voltage characteristics two-dimensional structures are investigated in double-barrier heterostructure electron devices. In a gated resonant tunneling diode (GRTD), we have seen that different resonances can be observed in forward and reverse collector bias by depletion effects. We also investigated the effect of barrier size onthe existence of negative transconductance at a fixed emitter-collector bias with elastic and inealstic scattering mechanism.