PREPARATION OF VO_x DOPED SiO_2 THIN FILMS FROM THE SOL-GEL METHOD

摘要

SiO_2 thin films doped with VO_x (x = 2-2.5) were prepared by the Sol-gel dip-coating method. Series of experiments were made by comparision, The results showed that doping concentration of vanadium ion and heat treatment had substaintial influence on the properties of the films. The Sol-gel process, preparing and gas sensing-mechanism were studied respectively. And the factors and reasons to influence the sensitivity and transmissivity are discussed in this paper.