Laser generation mechanism of submillimeter range electromagnetic oscillations on p-n junction

摘要

The longitudinal oscillation in an inhomogeneous (p- and n-regions) semiconductor plasma of a p-n junction have been investigated theoretically. It is shown that in a forward biased p-n junction the instability of oscillations can be arised due to the stimulated coupled plasmon emission by injected electrons. The condition on the parameters of a p-n junction and on external circuit, which lead to the generation of submillimeter range oscillations (coupled plasmons), have been formulated.