Low Frequency Fluctuations in Scaled Down Silicon CMOS Devices Status and Trends

摘要

The most recent issues about the low frequency noise in CMOS devices are presented. The various approaches such as the carrier number and the Hooge mobility fluctuations schemes currently used for the interpretation of the noise sources are discussed. The main physical properties which characterize the Random Telegraph Signals in small area MOS transistors are reviewed. The impact of the miniaturization on the low frequency noise and RTS fluctuations in scaled 0.35¿m CMOS Silicon devices as well as the trends for the noise figure of the foregoing 0.18¿m and 0.1¿m CMOS technologies are emphasized.