On P-I-N Diode Parameters and Static Properties at Elevated Temperatures and High Current Densities-Experiment vs. Simulation

摘要

A well calibrated free-carrier absorption (FCA) technique was used to characterize the physical properties of P-I-N diode samples at different temperatures and injection levels. The measurements were compared with simulations in order to check the validity of some models and parameters which commonly appear in the simulation programs. The samples, as well as measurement temperatures (30-150°C) and injection levels (10¹⁵-10¹⁷cm^{¿3}), are typical for the driving conditions of power devices.