Application of 2D-Hydrodynamic Energy Modelling to the Optimization of Planar-Doped pseudomorphic HEMTs

摘要

In this work, we present the results of structural optimization of ¿-doped pseudomorphic HEMTs. This study was performed using a 2D hydrodynamic energy model of high performance. The results indicate a limite for gate length reduction as well as rear plan doping. Also, we were able to show that an upper limit for the gate-edge of recess separation is to be respected.