Manufacturability of 3D-Epitaxial-Lateral-Overgrowth CMOS Circuits with Three Stacked Channels

摘要

Epitaxial lateral overgrowth of Si over oxide has been perfected to yield dual-gate transistor stacks with three stacked channels providing high and matched transconductances. Threshold voltage with standard deviation ranging from 50mV to 110mV allow complex 3D logic circuits like parallel multipliers.