Electron heating and quantum transport in deep submicrometer n-MOSFET's at low temperatures and high magnetic fields

摘要

We studied Shubnikov-de Haas oscillations in Si MOSFET's with gate lengths ranging from 0.1 ¿m to 2 ¿m. They show a reduction of electron temperature for a given electric field in the shortest devices. In this case, carrier thermalization is incomplete. This result also explains why quantum interferences at zero magnetic field are observed up to unexpectedly large drain biases.