Metamorphic In0.27Ga0.73As/In0.25Al0.75As HEMT on GaAs: MBE growth and device performance

机译：GaAs上的变质In 0.27 Ga 0.73 As / In 0.25 Al 0.75 As HEMT：MBE生长和器件性能

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A new HEMT using InAlAs/InGaAs grown on GaAs has been realized. This structure, with an In content close to 27%, presents high electron mobility with high 2DEG density (20700 cm²/V.s with 4ÃÂÃÂ10¹²cm^ÃÂÃÂ¿2 at 77K) and high Schottky barrier quality (Vb=0.68V with n=1.1). A 3 ÃÂÃÂ¿m gate length device has shown intrinsic transconductance as high as 530 mS/mm.

机译：已经实现了使用在GaAs上生长的InAlAs / InGaAs的新型HEMT。此结构的In含量接近27％，具有高2DEG密度（20700 cm ^{2 / Vs和4ƒƒÂ—10 ^{12 cm ^{ÃƒÂ‚Â¿2 在77K时）和高肖特基势垒质量（Vb = 0.68V，n = 1.1）。 3 µm栅极长度的器件显示出的固有跨导高达530 mS / mm。}}}

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《Solid State Device Research Conference, 1992. ESSDERC '92》|1992年|317-320|共4页
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Win P.; Cordier Y.; Druelle Y.; Bouillet C.; Favre J; Cappy A.;
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Metamorphic In0.27Ga0.73As/In0.25Al0.75As HEMT on GaAs: MBE growth and device performance

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