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355-nm absorption in HfO_2 and SiO_2 monolayers with embedded Hf nanoclusters studied using photothermal heterodyne imaging

机译:使用光热外差成像研究了HFO_2和SiO_2单层中的355-nm吸收与嵌入式HF纳米能器进行研究

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The role of the Hf nanoclusters as near-UV, nanosecond-pulse laser-damage initiators in HfO_2/SiO_2-pair-based multilayer coatings remains speculative. In this work we use photothermal. heterodyne imaging (PHI) to investigate absorption in HfO_2 and SiO_2 monolayers containing embedded nanometer-sized Hf clusters produced by backside-through-thin-film ablation. Hf cluster size and areal-density distributions were characterized using transmission electron microscopy. PHI measurements were taken for cluster-containing samples and for similarly prepared HfO_2 and SiO_2 film samples of the same thickness without clusters. These data allow us to evaluate a possible role in the damage-process initiation of two hypothetical sources of the localized absorption-Hf clusters and high-density areas of electronic defects.
机译:HF纳米能器作为近UV,纳秒脉冲激光损伤引发剂的HF纳米簇的多层涂层中的作用仍然是推测。在这项工作中,我们使用光热。外差成像(PHI)研究含有由背面 - 薄膜消融产生的嵌入纳米尺寸的HF簇的HFO_2和SiO_2单层中的吸收。使用透射电子显微镜表征HF簇大小和区域密度分布。针对含簇的样品采用PHI测量,并且对于没有簇的类似制备的HFO_2和SiO_2薄膜样品。这些数据允许我们在局部吸收 - HF簇的两个假想来源和电子缺陷的高密度区域的损伤过程中开始可能的作用。

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