首页> 外文会议>Meeting of the Electrochemical Society;Symposium on sensors, actuators, and microsystems general session >Luminescence of ZnS:Cu,Cl Phosphor Powder Excited by Photons, An Electric Field and Cathode rays
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Luminescence of ZnS:Cu,Cl Phosphor Powder Excited by Photons, An Electric Field and Cathode rays

机译:光子,电场和阴极射线激发的ZnS:Cu,Cl荧光粉的发光

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Semiconductor zinc sulfide (ZnS), with bandgap energies of 3.7eV and 3.8eV in zinc-blende and wurtzite structures [1], respectively, has great potential for use in solar cells [2], infrared windows [3], and phosphor materials. These material properties are achieved by doping with transition or rare-earth metals [4,5] and are based on its large bandgap energy, direct recombination and high resistance to electric fields. Additionally, owing to the advantages of its simple manufacturing process, the convenience of being able to print a large area and its high power efficiency, ZnS phosphor powder could be excited by photons, cathode rays or an electric field for back lighting of liquid crystal panels or for flat panel displays. The most widely used form of this phosphor material is ZnS:Cu,Cl, in which Cu and Cl behave as acceptors and donors, respectively, and are both contributing to the emission. The luminescence or emission color of ZnS phosphor powder can be classified into five kinds, depending on the relative concentration of activators (Cu) and co-activators (Cl) [6]. Cu doping can cause phase transformation, Gu_xS precipitation and tensile strain in ZnS by substituting Zn sites or interstitially entering the lattice, which were observed via Raman, transmission electron microscopy (TEM) and x-ray diffraction (XRD) analyses [7-9].
机译:半导体硫化锌(ZnS)在闪锌矿和纤锌矿结构中的带隙能分别为3.7eV和3.8eV [1],具有在太阳能电池[2],红外窗口[3]和荧光粉材料中使用的巨大潜力。这些材料的特性是通过掺杂过渡金属或稀土金属[4,5]来实现的,并且基于其大的带隙能,直接重组以及对电场的高抵抗力。此外,由于其制造工艺简单,能够进行大面积印刷的便利性以及其高功率效率,ZnS荧光粉可能会被光子,阴极射线或电场激发而用于液晶面板的背光照明。或用于平板显示器。这种荧光粉材料使用最广泛的形式是ZnS:Cu,Cl,其中Cu和Cl分别充当​​受体和施主,并且都有助于发光。 ZnS荧光粉的发光或发射颜色可分为五种,具体取决于活化剂(Cu)和共活化剂(Cl)的相对浓度[6]。铜掺杂会通过取代锌位点或间隙地进入晶格而引起相变,Gu_xS沉淀和ZnS拉伸应变,这是通过拉曼光谱,透射电子显微镜(TEM)和X射线衍射(XRD)分析观察到的[7-9]。 。

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