Characterization of thermally oxidized SiO_2/SiC interfaces by leakage current under high electric field, cathode luminescence (CL), X-ray photoelectron spectroscopy (XPS), and high-resolution Rutherford backscattering spectroscopy (HR-RBS)

摘要

Wet and N_2O oxidized SiO_2/SiC for C-face substrates were comprehensively investigated to clarify the origin of oxide defects which affect channel mobility and threshold voltage stability by using leakage-current analysis. The estimated defects are identified by cathode luminescence, X-ray photoelectron spectroscopy, and high-resolution Rutherford backscattering spectroscopy. The origin of the observed oxide defects might be complex defect of O vacancy defects and/or C related defects including N.