Distribution of As atoms in InP/InPAs/INP and InP/InGaAs/InP hetero-structures measured by X-ray CTR scattering

摘要

The distribution of As atoms in InP/InPAs/InP layer and the distributions of As and Ga atoms in InP/InGaAs/InP hetero-epitaxial layer were investigated in the atomic scale by X-ray CTR scattering. The relationship between PH_3-purge time (after InPAs and IngaAs layers were constructed) and the distributions of As and/or Ga atoms were studied. It was shown that the number of As atoms included in the InP cap layer decreased as the PH_3-purge time increased. However, the As atoms constructing the hetero-layer were also descorbed as the PH_3-purge time increased.