Photoluminescence and photoluminescence excitation spectroscopy of In Situ Er-doped and Er-implanted GaN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY

摘要

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I sub 13/2 4I 15/2 emission of Er sup 3+ in in situ Er-doped and Erimplanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grownGaN films are compared with Er-implanted GaN grown by netal organic chemical vapor deposition (MOCVD).