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MAXIMUM AT ALS: A Powerful Tool to Investigate Open Problems in Micro- and Optoelectronics

机译:ALS的最大值:一种调查微电子和光电子的打开问题的强大工具

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We rpesent recnet results obtained by MAXIMUM at the Advanced Light Source (ALS), at the Lawrence Berkeley National Laboratory. MAXIMUM is a scanning photoemission microscope, based on a multilayer coated Schwarzschild objective. An electron energy analyzer collects the emitted photoelectrons to form an image as the sample itself is scanned. The microscope has been purposely designed to take advantage of the high brightness of the third generation synchrotron radiation sources, and it installation at ALS has been recently completed. The spatial resolution of 100 nm and the spectral resolution of 200 meV make our instrument an extremely interesting tool to investigate current problems in opto- and microelectronics. In order to illustrate the potential of MAXIMUM in these fields, we report new results obtaiend by studying hte electromigration in Al-Cu lines and the Al segregation in AlGaN thin films.
机译:我们在劳伦斯伯克利国家实验室在高级光源(ALS)上最大限度地获得了RPERNET结果。 最大是一种扫描光曝光显微镜,基于多层涂层Schwarzschild目标。 电子能量分析仪收集发射的光电子以形成图像,因为样品本身被扫描。 显微镜已经故意设计用于利用第三代同步辐射源的高亮度,最近完成ALS的IT安装。 200nm的空间分辨率和200 mev的光谱分辨率使我们的仪器成为一种极其有趣的工具来调查光学和微电子中的当前问题。 为了说明这些领域最大的潜力,通过研究Al-Cu线中的HTE电迁移和AlGaN薄膜中的Al偏析来报告新的结果凋亡。

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