A high intensity electron beam ion trap for charge state boosting of radioactive ion beams

摘要

A high intensity electron beam ion trap under development at LLNL could be adapted for charge state boosting of radioactive ion beams, enabling a substantial reduction in the size and cost of a post-accelerator. We report estimates of the acceptance, ionization time, charge state distribution, emittance, and beam intensity for charge state boosting of radioactive ions in this device. The estimates imply that, for tin isotopes, over 10~(10) ions/s can be ionized to q chemical bounds 40+ with an aboslute emittance of approximately 1 pi mm mrad at an energy of 30xq keV.