Characterization of impurities and defects in InSb and HgCdTe using novel magneto-optical techniques

摘要

Abstract: Detection and identification of impurities and defects in semiconductor materials has long been a topic of technological importance. Of particular interest is the activation energy of the impurity/defect states. For narrow-gap materials magneto-optics is a technique of choice, since resonant transitions from impurity-to-band or band-to-impurity states allow for the precise determination of just these states. Two magneto-optical techniques, resonant magneto-optical and resonant impact ionization spectroscopy, have been successfully used to investigate intrinsic magnetoabsorption and shallow and deep impurity and defect levels in bulk InSb and in bulk and liquid-phase-epitaxy HgCdTe. In this paper, these magneto-optical techniques will be reviewed, concentrating on their versatility and sensitivity for the detection and identification of weak absorption process such as those expected when impurity and defect levels are involved. A discussion of the mechanisms and results for a variety of magneto-optical phenomena from both InSb and HgCdTe will be given and discussed.!77