Narrowband self-filtering GaAs photodetector characterized by hi-lo-hi np junction

摘要

and self-filtering GaAs photodiode has been fabricated by LPE growth. N-type epitaxial layers of hi-lo-hi structure were grown on P-type substrate. By properly controlling the thickness and the doping concentration of the epilayers efficient blue suppression of the detector response is achievable, with a bandwidth as narrow as 315 angstroms centered at 880 nm. The device, therefore, is very useful in many applications which require background suppression and spectral matching to the correspondent LED light source.