High-performance PtSi Schottky barrier sensor array with imaging capability

摘要

Abstract: performance PtSi Schottky barrier sensor arraywas developed. It was fabricated by using a double-polydouble-metal 2.0 $mu@m Si-based technology and anultra-high vacuum E-beam PtSi process. The barrierheight of the Schottky barrier IR detector is 0.21 to0.22 eV with 4nA/cm$+2$/ dark current density at77$DGR@K. Its quantum efficiency is 0.3% at 4 $mu@m.The charge handling capacity of the CCD is larger than2.0E6 electrons/pixel. The charge transfer efficiencyof the CCD at 77$DGR@K is 0.9998 to 0.9999. The imagingcapability of this chip to a thermal scene has beendemonstrated. !10