首页> 外国专利> Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors

Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors

机译:制作包括肖特基势垒探测器阵列的电荷耦合器件成像器的方法

摘要

A method of making an imager which includes substrate of single crystalline silicon having on one surface of a plurality of spaced detectors arranged in columns and a charge-coupled device between each pair of columns of the detectors. The charge-coupled devices are formed first with the gates of the charge-coupled devices defining detector areas of the substrate surface. A guard-ring is formed in each detector area with the edges of the gates around the detector area defining one edge of the guard-ring so that the guard-rings are aligned with the edges of the surrounding gates. A layer of insulating material is formed over the detector areas with the portion of the insulating layer over the guard-ring being thicker than the remaining portion of the insulating layer. The thinner portion of the insulating layer is removed leaving the thicker portion over the guard-ring region and with an edge of the thicker portion being substantially in alignment with an edge of the guard-ring region. A conductive layer is formed on the exposed portion of the detector areas of the substrate surface with the conductive layer forming a Schottky-barrier junction with the substrate.
机译:一种制造成像器的方法,该方法包括:单晶硅衬底,该衬底在以列布置的多个间隔的检测器的一个表面上;以及在检测器的每对列之间的电荷耦合器件。首先形成电荷耦合器件,其中电荷耦合器件的栅极限定衬底表面的检测器区域。在每个检测器区域中形成有保护环,其中围绕检测器区域的栅极的边缘限定了保护环的一个边缘,使得保护环与周围的栅极的边缘对准。在检测器区域上方形成一层绝缘材料,保护环上的绝缘层部分比绝缘层的其余部分厚。去除绝缘层的较薄部分,从而在保护环区域上方留下较厚的部分,并且较厚部分的边缘与保护环区域的边缘基本对准。在基板表面的检测器区域的暴露部分上形成导电层,其中该导电层与基板形成肖特基势垒结。

著录项

  • 公开/公告号US4548671A

    专利类型

  • 公开/公告日1985-10-22

    原文格式PDF

  • 申请/专利权人 RCA CORPORATION;

    申请/专利号US19840633437

  • 申请日1984-07-23

  • 分类号H01L21/306;B44C1/22;C03C15/00;C23F1/02;

  • 国家 US

  • 入库时间 2022-08-22 07:51:47

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