Buried-channel CCDs with high-charge transfer efficiency and large-charge capacity for low-temperature readout of long-wavelength infrared detectors

摘要

Abstract: ion implantation has been used to fabricate buried-channel CCDs that exhibit good charge transfer efficiency at temperatures down to 50 K while retaining large charge storage capacity. Monolithic infrared focal plane arrays integrating such CCDs and Ge$-x$/Si$- 1$MIN@x$//Si heterojunction detectors show good imaging performance in both the 3 - 5 $mu@m and 8 - 10 $mu@m infrared spectral bands. !5