7.4μW Ultra-high slew-rate pseudo single-stage amplifier driving 0.1-to-15nF capacitive load with >69° phase margin

摘要

To achieve ultra-high slew-rate with stable operation under wide capacitive load range, pseudo single-stage amplifier is proposed in this paper. The proposed amplifier achieves widest capacitive load drivability (x150). Also, this work achieves at least 151 times larger FOM for slew-rate compared to state-of-the-art works. This chip was fabricated using a 0.18 μm CMOS process with area of 0.0021 mm.