Corrosion resistant aluminum inter connect for plastic encapsulated integrated circuits

摘要

The anodic processing of aluminum interconnect patterns provides a method of rendering aluminum interconnect compatible with non hermetic packaging. The presence of the barrier layer at the aluminum surface acts to greatly enhance the corrosion resistance of aluminum metal. The reliability of such interconnects on plastic encapsulated integrated circuits has been demonstrated. An evaluation of the dielectric properties of the anodic oxide of aluminum indicate properties which are compatible with single and multilevel interconnects for integrated circuits.