Structures and characteristics of 400A–300V monolithic high power transistors

摘要

Toshiba has developed two types of high power npvn transistors which have collector current ratings of 400A and collector-emitter voltage ratings of 300V. The first is a conventional one and the second is a monolithic Darlington-connected one. Both have the same 40mmΦ pellet size. They are produced by triple diffusion techniques. The structures, features and electrical characteristics of these transistors are described.