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High power gate turn-off thyristors (GTO'S) and GTO-VVVF inverter

机译：大功率栅极关断晶闸管（GTO'S）和GTO-VVVF逆变器

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Three types of high power GTO's with voltage ratings of 600 to 1300V, and maximum gate turn-off currents of 200 to 600A were developed. Design considerations for realizing these devices will be described. In addition, various results will be demonstrated relating to the development of a VVVF inverter using these devices.

机译：开发了三种额定电压为600至1300V，最大栅极关断电流为200至600A的高功率GTO。将描述用于实现这些设备的设计考虑。此外，将展示与使用这些设备开发VVVF逆变器有关的各种结果。

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《IEEE Power Electronics Specialists Conference 》|1977年|268-274|共7页
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Kiahi Keiji; Kurata Mamoru; Jmai Koji; Seki Nagataka;
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专利

1. A time-dependent two-dimensional analysis of the turn-off process in a gate turn-off thyristor (GTO) [J] . Vobecky J., Bleichner H. IEEE Transactions on Electron Devices . 1993 ,第12期

机译：栅极关断晶闸管（GTO）的关断过程的时变二维分析
2. 6000-V gate turn-off thyristors (GTOs) with n-buffer and new anode short structure [J] . Ogura T., Kitagawa M. IEEE Transactions on Electron Devices . 1991 ,第6期

机译：具有n缓冲器和新型阳极短路结构的6000V栅极关断晶闸管（GTO）
3. The Integrated Emitter Turn-Off Thyristor (IETO)—An Innovative Thyristor-Based High Power Semiconductor Device Using MOS Assisted Turn-Off [J] . Bragard M., Conrad M., van Hoek H., Industry Applications, IEEE Transactions on . 2011 ,第5期

机译：集成发射极关断晶闸管（IETO）-一种基于MOS辅助关断的基于晶闸管的创新型大功率半导体器件
4. High power gate turn-off thyristors (GTO'S) and GTO-VVVF inverter [C] . Kiahi Keiji, Kurata Mamoru, Jmai Koji, IEEE Power Electronics Specialists Conference . 1977

机译：高功率门关闭晶闸管（GTO）和GTO-VVVF逆变器
5. Design and fabrication of 4h silicon carbide gate turn-off thyristors [D] . Lin, Lei. 2013

机译：4H碳化硅门关闭晶闸管的设计和制作
6. Identification of Gate Turn-Off Thyristor Switching Patterns Using Acoustic Emission Sensors [O] . Maciej Kozak, Artur Bejger, Arkadiusz Tomczak 2021

机译：使用声发射传感器识别闸门关断晶闸管开关图案
7. Gate drive circuit for gate turn-off thyristor including current limiting circuit and circuit simulation with SPICE2 for GTO and saturable core [O] . Kua Hooi Guan Electrical Engineering and Computer Science Faculty of Engineering UNSW 1988

机译：用于栅极关断晶闸管的栅极驱动电路，包括限流电路和使用SPICE2进行GTO和饱和磁芯的电路仿真
8. Development of High Speed Power Thyristor the Gate Assisted Turn-off Thyristor [R] . Hamilton, D. R., Brewster, J., Frobenius, D., 1972

机译：高速功率晶闸管门极辅助关断晶闸管的研制

High power gate turn-off thyristors (GTO'S) and GTO-VVVF inverter

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