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Monolithic Integration of a 3-Level DCM-Operated Low-Floating-Capacitor Buck Converter for DC-DC Step-Down Conversion in Standard CMOS

机译:3级DCM操作的低浮电容降压转换器的单片集成,用于标准CMOS中的DC-DC降压转换

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This paper addresses the fully monolithic integration of a 3-level 2-phase buck converter for DC-DC step-down conversion in standard CMOS. First it is shown a design-oriented analysis of the converter considering DCM mode (due to PFM operation for low output currents) and with low values of the floating capacitor (to improve integrability). At transistor-level, a self-driving scheme is proposed which allows supplying the tapered buffer drivers fromthe floating capacitor, thereby reducing the voltage across the power MOSFETs gate dielectric and improving efficiency. The presented converter exhibits enhanced degrees of freedom in the design space defined by the switching frequency, inductor and capacitors values, which have an impact on the achievable efficiency, occupied silicon area and output ripple. An optimized design exploration is carried out for V_(bat) velence 3.6 V, V_(o) velence 1 V, I_(o) velence 100 mA, (DELTA)V_(o) velence 50 mV, which yields a converter with the following main characteristics: L velence 20.9 nH, C_(o) velence 18.6 nF, C_(x) velence 3.8 nF and f_(s) velence 51.79 MHz (for I_(o) velence 100 mA), a power efficiency of 68.51percent and a occupied area of 3.77 mm~(2), which results in a clear improvement when the same structured design method is applied to classical Buck converter. However, finally a lower switching frequency design is selected to be implemented to allow control loops operation (f_(s) velence 37.28 MHz). After providing details of the layout design, full-transistor level simulation results validate the improved performance and the efficiency model. Experimental results from an implemented IC validate the time-domain functionality of the on-chip converter.
机译:本文地址的3级的2相降压转换器用于标准CMOS的DC-DC降压转换的完全单片集成。首先,它被示出考虑DCM模式(由于为低输出电流PFM操作)和对浮动电容器的低的值(以改善积)的转换器的面向设计的分析。在晶体管级,自驱动方案,提出了允许供给锥形缓冲驱动器fromthe浮动电容器,由此减小整个功率MOSFET的栅极电介质上的电压和提高了效率。所提出的转换器表现出增强的自由度在由开关频率,电感器和电容器的值,这对可实现的效率产生影响限定的设计空间,占用硅面积和输出纹波。优化的设计勘探用于V_(BAT)Velence的3.6 V下进行,V_(O)Velence的1 V,I_(O)Velence的100毫安,(DELTA)V_(O)Velence的50毫伏,这产生一个转换器,具有以下主要特征:L Velence的20.9 NH,C_(O)Velence的18.6 NF,C_(x)的Velence的3.8 NF和F_(S)Velence的51.79兆赫(对于I_(O)Velence的100毫安),68.51percent和一个的功率效率的3.77毫米〜(2),其结果在明显改善当相同的结构化设计方法应用于古典降压转换器占有面积。然而,最终选择了较低的开关频率设计中实现,以允许控制环操作(F_(S)Velence的37.28兆赫)。提供所述布局设计的细节后,全晶体管级仿真结果验证了改进的性能和效率的模型。从实现IC的实验结果验证了片上转换器的时域的功能。

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