Dual-Gate GaAs FET as a Frequency Multiplier at Ku-Band

摘要

The feasibility of using dual-gate GaAs FET as a frequency multiplier over the Ku-band with a good conversion gain has been demonstrated. Experimentally, it achieved 8dB conversion gain from frequency doubling at 12.6 GHz and 2.5 dB gain from frequency tripling at 12 GHz. Also it possesses a built-in variable gain control over 36 dB dynamic range.