...
首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 156 GHz single-stage GaAs dual-gate FET monolithic analog frequency divider with reduced input threshold power
【24h】

A 156 GHz single-stage GaAs dual-gate FET monolithic analog frequency divider with reduced input threshold power

机译:具有降低的输入阈值功率的156 GHz单级GaAs双栅极FET单片模拟分频器

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Use of a dual-gate FET mixer and a rejection filter has resulted in a simplification of the circuit configuration and a reduction of the input threshold power, respectively, of an analog frequency divider MMIC. The device exhibits an input threshold power of 1.4 dBm in the operating frequency band from 14.2 GHz to 15.3 GHz. The circuit promises to be very valuable for the development of monolithic phase-locked loops (PLLs).
机译:使用双栅极FET混频器和抑制滤波器分别简化了电路配置并降低了模拟分频器MMIC的输入阈值功率。该器件在14.2 GHz至15.3 GHz的工作频带中具有1.4 dBm的输入阈值功率。该电路有望对单片锁相环(PLL)的开发非常有价值。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号