首页> 外文会议>IEEE MTT-S International Microwave Symposium Digest >A Rigorous Solution to the Low-Frequency Breakdown in Full-Wave Finite-Element-Based Analysis of General Problems Involving Inhomogeneous Lossy Dielectrics and Non-ideal Conductors
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A Rigorous Solution to the Low-Frequency Breakdown in Full-Wave Finite-Element-Based Analysis of General Problems Involving Inhomogeneous Lossy Dielectrics and Non-ideal Conductors

机译:基于全波有限元的低频击穿的严格解决方案,涉及不均匀损耗电介质和非理想导线的一般问题的基于全波有限元的分析

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State-of-the-art methods for solving the low-frequency breakdown problem of full-wave solvers rely on low-frequency approximations, the accuracy of which is a great concern. A rigorous method is developed in this work to fundamentally eliminate the low frequency breakdown problem for full-wave finite-element based analysis of general 3-D problems involving inhomogeneous lossy dielectrics and non-ideal conductors. In this method, the frequency dependence of the solution to Maxwell's equations is explicitly derived from DC to any high frequency. The rigor of the proposed method has been validated by the analysis of realistic on-chip circuits at frequencies as low as DC. Moreover, the proposed method is applicable to both low and high frequencies, and hence constituting a universal solution to Maxwell's equations in a full electromagnetic spectrum.
机译:解决全波溶剂的低频击穿问题的最先进方法依赖于低频近似,其准确性是一个很大的关注。在这项工作中开发了一种严格的方法,从而乎地消除了基于全波有限元的低频击穿问题,其基于全波有限元的分析涉及不均匀的损耗电介质和非理想导体的一般基于3-D问题。在该方法中,将解决方案对麦克斯韦方程的频率依赖性从DC明确地导出到任何高频。所提出的方法的严格已经通过分析了低于DC的频率的现实片上电路来验证。此外,所提出的方法适用于低频率和高频,因此构成了全电磁谱中Maxwell等式的通用解决方案。

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