A monolithic planar array containing thousands of GaAs barrier-intrinsic-n/sup +/ diodes have produced 1-W output power at 100 GHz in a tripler configuration. Tripling efficiency of 8.5% has been obtained from approximately 4-mW incident power on each diode, in excellent agreement with the predictions of large-signal nonlinear circuit analysis of frequency multiplication. The device performance is limited by the parameters of the fabricated diodes. Significant improvement is expected with realizable diode parameters and optimized pumping condition.
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机译：包含数千个GaAs屏障内联 - N / SUP + /二极管的单片平面阵列在三倍的配置中产生了100 GHz的1W输出功率。每二极管对大约4MW的入射电量获得8.5％的三倍效率，与频率乘法的大信号非线性电路分析的预测非常一致。设备性能受到制造二极管的参数的限制。可实现的二极管参数和优化的泵送条件预期显着改进。
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