@@ CoFeB is one of the most common magnetic layers used in MgO based magnetic tunnel junctions (MTJs), which is used in magnetic random access memory (MRAM) and magnetic nano-oscillators. In these applications, high tunneling magnetoresistance (TMR) as well as proper dynamic properties are highly desirable. It is recently demonstrated that a giant TMR can be archived by rapid thermal annealing (RTA) . The annealing time dependence offers an additional freedom of the control to the material processing. Here we show the effect of RTA on magnetization dynamics of CoFeB thin film.
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