Determination of transient transistor capacitances of high voltage MOSFETs from dynamic measurements

摘要

This paper describes for the first time the determination of transient transistor capacitances of a high voltage transistor in a commutation circuit with application relevant conditions. Therefore, the gained characteristics reflect the transistor capacitances during switching. The dependency on operating conditions can be analyzed. New information on the drain current distribution between channel current and output capacitance current is gained from dynamic measurements. As a result, a recommendation is made for more accurate calculation of switching losses.