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Design and Realization of a 100kHz-100kW Series Resonant Inverter with SiC-MOSFETs Connected in Parallel for a High Frequency Induction Heating Application

机译:用SiC-MOSFET进行设计与实现100kHz-100kW系列谐振逆变器,SiC-MOSFET并联连接高频感应加热应用

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With the development of recent technologies on semiconductor industry, SiC-MOSFETs are becoming more and more popular in today's power electronic era. As their operating voltages are getting higher, they have started to replace IGBTs in many applications due to their much less power dissipation and more availability of using in high frequency applications. In this article an induction surface hardening system which operates at around 100kHz frequency and up to 100kW output power level has been studied. In order to fulfill these requirements SiC-MOSEFT Power Modules were chosen and two of them per one switch were connected in parallel in order to build-up a full bridge structure for a series resonant inverter. In order to minimize the parasitic inductance effects, a careful study was held on during the parallelization of the SiC-MOSFET modules. Beside this a new and reliable control technique to follow the resonant frequency has also been introduced and realized.
机译:随着近期半导体行业技术的发展,SIC-MOSFET在当今的电力电子时代变得越来越受欢迎。由于其运行电压越来越高,因此由于其在高频应用中使用的功率耗散较小和更多可用性,因此它们已经开始在许多应用中替换IGBT。在本文中,已经研究了大约100kHz频率和高达100kW输出功率水平的诱导表面硬化系统。为了满足这些要求,选择SiC-Moseft电源模块,并且每一个开关中的两个并联连接,以便为串联谐振逆变器构建全桥结构。为了最小化寄生电感效应,在SiC-MOSFET模块的并行化期间保持仔细研究。除此之外,还引入并实现了一种新的可靠的控制技术来遵循谐振频率。

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