Abstract: The stimulated emission of far IR radiation from uniaxially strained gapless Hg$-1$MIN@x$/Cd$-x$/Te was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor. !7
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机译：摘要：实验观察到单轴应变的无间隙Hg $ -1 $ MIN @ x $ / Cd $ -x $ / Te的远红外辐射受激发射。提出了这种效应的机制，同时考虑了无间隙半导体中应变引起的能谱转换和杂质受体能级转换。 ！7
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