Rapid Non-invasive temperature Measurment of Complex SI Structures Using In-Situ Spectroscopic Ellipsometry.

摘要

Use of spectroscopic ellipsometry for temperature monitoring of complex Si structures is discussed. System calibration is demonstrated for Si epitaxy between 610 degree and 850 degree on our growth system and shown to be in reasonable agreement with reference data in the literature. use of virtual interface analysis of spectroscopic ellipsometry spectra is shown to allow an emitance-free determination of wafer temperature during growth on complex silicon-on-insulator substrates and highights the large errors obtained from the corresponidng pyrometer measurement. Measurement of emittance using spectrosopic elipsometry to correct the pyrometer values is shown to be feasible. Accurate realisation of epitaxial designs is obtained using spectroscopic ellipsometry to end-point thicknesses of epitaxial layers and differential techniques are introduced as a potentially more accourate and absolute source of temperature values.