Voltage overshoot study in 20V DeMOS-SCR devices

摘要

Based upon measurements of the HBM waveforms of DeMOS-SCR devices, the voltage overshoot during turn-on is studied as a function of device architecture and gate sub-circuit. It has been demonstrated that, in general, the overshoot voltage does not correlate to the TLP triggering voltage, but can be controlled in a wide range both at the device level and at the gate sub-circuit level by modifying blocking junction breakdown voltage, gate coupling and displacement current density in the internal parasitic BJT.