Industry First 100W Two-Stage RFIC for 900MHz GSM EDGE Base Station Applications

摘要

During the past years, high power RFICs have entered the base station arena. Their primary function was to serve as drivers for the final stages, exclusively composed up to now of conventional discrete transistors. The Silicon RFIC described in this paper is the first that is intended to serve as a final stage and the first to demonstrate an output power level of 100W CW. It is designed for the 900MHz GSM EDGE base station market, for which it enables new perspectives in terms of superior RF performance, low cost and ease of use capabilities.