Technology for Power Integrated Circuits with Multiple Vertical Power Devices

摘要

An original work in developing technology that allows the integration of multiple vertical power devices within Power ICs has been presented in this manuscript. The developed technology uses a combination of top and back trenches as well as wafer sawing to achieve complete dielectric isolation between the silicon islands. Each silicon island is capable of holding either single vertical power device or CMOS circuitry. The test structures have been manufactured, wafer diced and individual chips packaged and tested initially for mechanical and thermal stability.