Properties of RFLDMOS with low resistive substrate for handset power applications

摘要

High performance lateral diffused MOSFETs on a CMOS platform have been developed for handset power applications. The LDMOS, with 0.3 /spl mu/m physical gate length and 7 nm gate oxide, shows high f/sub T/ and f/sub Max/ values up to 32 and 26 GHz, respectively, as well as low on-resistance of 3.1 ohm-mm and high saturated current of about 450 /spl mu/A//spl mu/m. The breakdown voltage is measured to be 14 V. More than 70% efficiency at 900 MHz is demonstrated in a unit power cell with a gate width of 1.92 mm.