Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs

摘要

This paper discusses merits and limitations of CTLM (Circular Transfer Length Method) contact resistance assessment test structures. Requiring just one lithography step, these structures prove to be a simple yet very powerful tool in characterizing and optimizing the contact resistances for III-V based heterojunction bipolar transistors (HBTs).