Low Residual Stress and High Repeatability of SiNX Thin Films for InP-based Optoelectronic Device Fabrication by Dual Radio Frequency Plasma Enhanced Chemical Vapor Deposition

摘要

Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating influence of dielectric films formerly deposited on chamber wall.