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Nonparabolic Valence Subband in In0.53Ga0.47As/In0.52Al0.48As Multi-Quantum Wells Using Transmission Spectroscopy

机译：In0.53Ga0.47As / In0.52Al0.48As多量子阱中的非抛物化价子带的透射光谱

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Transimisson spectroscopy in lattice matched In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells (MQWs) structures were measured at some low temperatures. Steplike structures accentuated by the exciton peaks of interband transitions were observed in on transimisson specta. Energy of the three light hole transition was lower than one expected with calculation. The lower energy of the three light hole transition might suggest nonparabolisity of the light hole.

机译：在一些低温下测量了晶格匹配的In0.53Ga0.47As / In0.52Al0.48As多量子阱（MQWs）结构中的Transimisson光谱。在transimisson谱图中观察到带间跃迁的激子峰突显的阶梯状结构。三个光孔跃迁的能量低于计算得出的期望值。三个光孔跃迁的能量较低，可能表明该光孔无代谢性。

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《》|2007年|91-94|共4页
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Tanaka; K.; Kotera; N.;
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入库时间 2022-08-26 15:08:16

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1. Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure: Band nonparabolicity influence and the subband dependence [J] . Hu CM., Akazaki T., Takayanagi H., Physical Review, B. Condensed Matter . 1999,第11期

机译：In0.53Ga0.47As / In0.52Al0.48As异质结构中的零场自旋分裂：带非抛物线效应和子带依赖性
2. Hot electron energy relaxation via acoustic phonon emission in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions with double-subband occupancy - art. no. 085301 [J] . Tiras E., Celik H., Balkan N., Physical Review, B. Condensed Matter . 2001,第8期

机译：具有双子带占用的调制掺杂In0.53Ga0.47As / In0.52Al0.48As异质结中通过声子发射产生的热电子能量弛豫-艺术。没有。 085301
3. OBSERVATION OF SPIN-SPLITTING CROSSING BETWEEN SUBBANDS IN THE OPTICALLY DETECTED CYCLOTRON-RESONANCE SPECTRA OF IN0.53GA0.47AS/IN0.52AL0.48AS HETEROJUNCTIONS [J] . Chen YF., Dai YD., Fang FF., Physical Review, B. Condensed Matter . 1995,第7期

机译：IN0.53GA0.47AS / IN0.52AL0.48AS异质结光学检测到的回旋共振谱中子带间自旋分裂交叉的观察
4. Nonparabolic Valence Subband in In0.53Ga0.47As/In0.52Al0.48As Multi-Quantum Wells Using Transmission Spectroscopy [C] . Tanaka K., Kotera N. International Conference on Indium Phosphide and Related Materials . 2007

机译：使用传输光谱法IN0.53Ga0.47AS / IN0.52AL0.48AS多量子孔的非参半价值子带
5. Hole mobility in strained germanium and vanadium-III p-channel inversion layers with self-consistent valence subband structure and high-k insulators. [D] . Zhang, Yan. 2010

机译：具有自洽价子带结构和高k绝缘体的应变锗和钒III p沟道反型层中的空穴迁移率。
6. Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates [O] . M Shafi, RH Mari, A Khatab, 2010

机译：在（100）和（311）B GaAs衬底上生长的GaAs / AlGaAs多量子阱的深层瞬态光谱
7. Effect of an InP/In0.53Ga0.47As interface on spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As heterostructures [O] . Lin YP 2011

机译：InP / In0.53Ga0.47As界面对In0.52Al0.48As / In0.53Ga0.47As异质结构中自旋轨道相互作用的影响
8. Effect of Molecular-Beam-Epitaxial Growth Conditions on the Electrical Characteristics of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Diodes [R] . Oh, J. E., Mehdi, I., Pamulapati, J., 1989

机译：分子束 - 外延生长条件对In0.52al0.48as / In0.53Ga0.47as共振隧穿二极管电学特性的影响

Nonparabolic Valence Subband in In0.53Ga0.47As/In0.52Al0.48As Multi-Quantum Wells Using Transmission Spectroscopy

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