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CdSe thin films and nanowires synthesis using pulse electrodeposition technique

机译:使用脉冲电沉积技术合成CdSe薄膜和纳米线

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CdSe thin films and nanowires were prepared using unipolar current pulse electrodeposition technique. CdSe thin films were prepared on fluorine doped SnO/sub 2/ coated glass plates. The commercially available anodic alumina template having uniform pore size of 200 nm size was used to fabricate CdSe nanowire arrays. The electrodeposition bath consisted of aqueous solution including CdSO/sub 4/, SeO/sub 2/ and pH was adjusted using H/sub 2/SO/sub 4/. The diameter of CdSe nanowires depends on the electrodeposition conditions.
机译:使用单极电流脉冲电沉积技术制备了CdSe薄膜和纳米线。在掺氟的SnO / sub 2 /涂覆的玻璃板上制备CdSe薄膜。具有200nm尺寸的均匀孔径的可商购的阳极氧化铝模板用于制造CdSe纳米线阵列。电沉积浴由包含CdSO / sub 4 /,SeO / sub 2 /的水溶液组成,并且使用H / sub 2 / SO / sub 4 /调节pH。 CdSe纳米线的直径取决于电沉积条件。

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